RAM comparison Samsung M378A1K43EB2-CWE 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Samsung M378A1K43EB2-CWE 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Overall score

Samsung M378A1K43EB2-CWE 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A1K43EB2-CWE 8GB

Below the latency in the PassMark tests, ns

33 56

Around 41% lower latency
Faster write speed, GB/s

12.0 10.5

Average value in the tests
Higher memory bandwidth, mbps

25600 19200

Around 1.33% higher bandwidth

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Complete list of technical specifications

Samsung M378A1K43EB2-CWE 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Main characteristics

Other

Description

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2910 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns