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Samsung M378B5273CH0-CH9 4GB
Inmos + 256MB

Samsung M378B5273CH0-CH9 4GB vs Inmos + 256MB

Overall score
star star star star star
Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Overall score
star star star star star
Inmos + 256MB

Inmos + 256MB

Differences Specifications Comments

Differences

Samsung M378B5273CH0-CH9 4GB Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
  • Faster reading speed, GB/s
    13.2 left arrow 11.5
    Average value in the tests
Inmos + 256MB Reasons to consider
Inmos + 256MB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 37
    Around -23% lower latency
  • Faster write speed, GB/s
    9.1 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    16800 left arrow 10600
    Around 1.58 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Inmos + 256MB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 30
  • Read speed, GB/s
    13.2 left arrow 11.5
  • Write speed, GB/s
    8.4 left arrow 9.1
  • Memory bandwidth, mbps
    10600 left arrow 16800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2143 left arrow 2318

Samsung M378B5273CH0-CH9 4GB RAM comparisons

Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB

Inmos + 256MB RAM comparisons

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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