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Samsung M471B5173EB0-YK0 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Compare
Samsung M471B5173EB0-YK0 4GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB
Overall score
Samsung M471B5173EB0-YK0 4GB
Overall score
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173EB0-YK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
44
58
Around 24% lower latency
Reasons to consider
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Report a bug
Faster reading speed, GB/s
17.7
13
Average value in the tests
Faster write speed, GB/s
9.3
8.2
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173EB0-YK0 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
58
Read speed, GB/s
13.0
17.7
Write speed, GB/s
8.2
9.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2069
1968
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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