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Hexon Technology Pte Ltd HEXON 1GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
Hexon Technology Pte Ltd HEXON 1GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
Hexon Technology Pte Ltd HEXON 1GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
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Faster reading speed, GB/s
3
20.5
Average value in the tests
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
62
Around -100% lower latency
Faster write speed, GB/s
15.5
1,843.6
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
62
31
Read speed, GB/s
3,556.6
20.5
Write speed, GB/s
1,843.6
15.5
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
542
3649
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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