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Micron Technology 4ATF51264AZ-2G6E1 4GB
Samsung M378A1K43DB2-CTD 8GB
Compare
Micron Technology 4ATF51264AZ-2G6E1 4GB vs Samsung M378A1K43DB2-CTD 8GB
Overall score
Micron Technology 4ATF51264AZ-2G6E1 4GB
Overall score
Samsung M378A1K43DB2-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4ATF51264AZ-2G6E1 4GB
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Faster reading speed, GB/s
16.4
16
Average value in the tests
Reasons to consider
Samsung M378A1K43DB2-CTD 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
34
Around -3% lower latency
Specifications
Complete list of technical specifications
Micron Technology 4ATF51264AZ-2G6E1 4GB
Samsung M378A1K43DB2-CTD 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
34
33
Read speed, GB/s
16.4
16.0
Write speed, GB/s
12.1
12.1
Memory bandwidth, mbps
21300
21300
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2616
2947
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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