RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
30
Around 17% lower latency
Faster reading speed, GB/s
16.1
10
Average value in the tests
Faster write speed, GB/s
10.1
8.5
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
30
Read speed, GB/s
16.1
10.0
Write speed, GB/s
10.1
8.5
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2234
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB RAM comparisons
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905402-665.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905744-076.A00G 16GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
A-DATA Technology DOVF1B163G2G 2GB
King Tiger Technology Tigo-X3-3200MHz-8G 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Kingston HP698651-154-MCN 8GB
Mushkin MRA4S293MMMF32G 32GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMT16GX4M2C3000C15 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-4000C18-16GTRS 16GB
Kingston 99U5584-004.A00LF 4GB
Kingston MSI24D4U7S8MH-8 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston KHX2933C17S4/8G 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Report a bug
×
Bug description
Source link