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Samsung M3 93T5750CZA-CE6 2GB
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Nanya Technology NT1GT64UH8D0FN-AD 1GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
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Faster reading speed, GB/s
3
3
Average value in the tests
Faster write speed, GB/s
2,622.0
1,569.0
Average value in the tests
Reasons to consider
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Report a bug
Below the latency in the PassMark tests, ns
66
77
Around -17% lower latency
Higher memory bandwidth, mbps
6400
5300
Around 1.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Main characteristics
Memory type
DDR2
DDR2
Latency in PassMark, ns
77
66
Read speed, GB/s
3,405.2
3,316.1
Write speed, GB/s
2,622.0
1,569.0
Memory bandwidth, mbps
5300
6400
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Clock speed
5-5-5-15 / 667 MHz
5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)
763
472
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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