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Samsung M393B5270CH0-CH9 4GB
Micron Technology 18KSF51272PZ-1G4K1 4GB
Compare
Samsung M393B5270CH0-CH9 4GB vs Micron Technology 18KSF51272PZ-1G4K1 4GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
Micron Technology 18KSF51272PZ-1G4K1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
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Faster reading speed, GB/s
10.6
7.5
Average value in the tests
Faster write speed, GB/s
9.0
7.4
Average value in the tests
Reasons to consider
Micron Technology 18KSF51272PZ-1G4K1 4GB
Report a bug
Below the latency in the PassMark tests, ns
39
42
Around -8% lower latency
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Micron Technology 18KSF51272PZ-1G4K1 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
42
39
Read speed, GB/s
10.6
7.5
Write speed, GB/s
9.0
7.4
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2423
1683
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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