Samsung M471A5244CB0-CTD 4GB
SK Hynix HMT351S6BFR8C-H9 4GB

Samsung M471A5244CB0-CTD 4GB vs SK Hynix HMT351S6BFR8C-H9 4GB

Overall score
star star star star star
Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Overall score
star star star star star
SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

Differences

  • Below the latency in the PassMark tests, ns
    39 left arrow 49
    Around 20% lower latency
  • Faster reading speed, GB/s
    15.5 left arrow 8.2
    Average value in the tests
  • Faster write speed, GB/s
    11.5 left arrow 5.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01% higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471A5244CB0-CTD 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    39 left arrow 49
  • Read speed, GB/s
    15.5 left arrow 8.2
  • Write speed, GB/s
    11.5 left arrow 5.2
  • Memory bandwidth, mbps
    21300 left arrow 10600
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2264 left arrow 1223
RAM Latency Calculator
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