Samsung M471A5244CB0-CTD 4GB vs SK Hynix HMT351S6BFR8C-H9 4GB

总分

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

总分

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

差异规格评论

差异

Samsung M471A5244CB0-CTD 4GB

需要考虑的原因
Samsung M471A5244CB0-CTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 49

左右 20% 更低的延时
更快的读取速度，GB/s

15.5 8.2

测试中的平均数值
更快的写入速度，GB/s

11.5 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01% 更高的带宽

SK Hynix HMT351S6BFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351S6BFR8C-H9 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A5244CB0-CTD 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

39 49
读取速度，GB/s

15.5 8.2
写入速度，GB/s

11.5 5.2
内存带宽，mbps

21300 10600

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2264 1223

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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