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DDR2 Liste de RAM
Tous les modules de mémoire, triés par latence croissante.
№
Bande passante
Latency, ns
Vitesse de lecture, GB/s
Vitesse d'écriture, GB/s
№
2021
RAM
Samsung M4 70T2953EZ3-CE6 1GB
Latency
73
Read speed
3,510.5
Write speed
1,423.3
№
2022
RAM
Kingston FQ453-80003 1GB
Latency
73
Read speed
2,477.0
Write speed
1,712.2
№
2023
RAM
Samsung M4 70T5669AZ0-CE6 2GB
Latency
73
Read speed
3,139.9
Write speed
1,203.8
№
2024
RAM
Qimonda 64T128020HU3.7A 1GB
Latency
73
Read speed
2,482.4
Write speed
1,267.1
№
2025
RAM
Qimonda 64T128021HDL3SB 1GB
Latency
73
Read speed
3,075.1
Write speed
1,381.2
№
2026
RAM
Apacer Technology 75.963A4.G08 512MB
Latency
73
Read speed
2,810.5
Write speed
1,727.9
№
2027
RAM
Nanya Technology NT256T64UH4A1FN-3C 256MB
Latency
73
Read speed
2,143.5
Write speed
1,013.7
№
2028
RAM
Hynix Semiconductor (Hyundai Electronics) HMP112S6EFR6C-Y5 1GB
Latency
73
Read speed
1,861.6
Write speed
1,246.1
№
2029
RAM
Transcend Information JM367Q643A-6 512MB
Latency
73
Read speed
2,558.1
Write speed
1,531.3
№
2030
RAM
Transcend Information JM667QSU-1G 1GB
Latency
73
Read speed
2,542.4
Write speed
1,295.0
№
2031
RAM
Kingston 99P5439-006.A00LF 2GB
Latency
73
Read speed
2,464.8
Write speed
1,620.7
№
2032
RAM
Kingston 99P5471-002 2GB
Latency
73
Read speed
3,135.3
Write speed
2,111.5
№
2033
RAM
Kingston 99U5431-005.A00LF 512MB
Latency
73
Read speed
2,654.8
Write speed
1,414.8
№
2034
RAM
Kingston 9905230-033.A00LF 1GB
Latency
73
Read speed
2,591.5
Write speed
1,046.2
№
2035
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP532S
Latency
73
Read speed
1,587.6
Write speed
618.7
№
2036
RAM
Kingston 9905295-045.A01LF 2GB
Latency
73
Read speed
3,100.4
Write speed
1,313.4
№
2037
RAM
Micron Technology 8HTF12864AY-53EA4 1GB
Latency
73
Read speed
2,809.7
Write speed
1,766.6
№
2038
RAM
Positivo Informatica Ltd 34973-MPO-CL6 2GB
Latency
74
Read speed
3,683.0
Write speed
2,495.5
№
2039
RAM
Positivo Informatica Ltd AU2G32-800P005-P 2GB
Latency
74
Read speed
3,427.4
Write speed
1,612.0
№
2040
RAM
Micron Technology 16HTF12864HY-667G1 1GB
Latency
74
Read speed
2,818.5
Write speed
1,261.3
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Dernières comparaisons
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Crucial Technology CT8G4SFS824A.M8FE 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMSX16GX4M2A3000C16 8GB
Corsair CML8GX3M2A1866C9 4GB
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SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3600C16-8GTZN 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CB8GS2400.C8ET 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C16-16GTZRC 16GB
Mushkin 991679ES 996679ES 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Apacer Technology 78.01GA0.9K5 1GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
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