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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2021
RAM
Samsung M4 70T2953EZ3-CE6 1GB
Latency
73
Read speed
3,510.5
Write speed
1,423.3
№
2022
RAM
Kingston FQ453-80003 1GB
Latency
73
Read speed
2,477.0
Write speed
1,712.2
№
2023
RAM
Samsung M4 70T5669AZ0-CE6 2GB
Latency
73
Read speed
3,139.9
Write speed
1,203.8
№
2024
RAM
Qimonda 64T128020HU3.7A 1GB
Latency
73
Read speed
2,482.4
Write speed
1,267.1
№
2025
RAM
Qimonda 64T128021HDL3SB 1GB
Latency
73
Read speed
3,075.1
Write speed
1,381.2
№
2026
RAM
Apacer Technology 75.963A4.G08 512MB
Latency
73
Read speed
2,810.5
Write speed
1,727.9
№
2027
RAM
Nanya Technology NT256T64UH4A1FN-3C 256MB
Latency
73
Read speed
2,143.5
Write speed
1,013.7
№
2028
RAM
Hynix Semiconductor (Hyundai Electronics) HMP112S6EFR6C-Y5 1GB
Latency
73
Read speed
1,861.6
Write speed
1,246.1
№
2029
RAM
Transcend Information JM367Q643A-6 512MB
Latency
73
Read speed
2,558.1
Write speed
1,531.3
№
2030
RAM
Transcend Information JM667QSU-1G 1GB
Latency
73
Read speed
2,542.4
Write speed
1,295.0
№
2031
RAM
Kingston 99P5439-006.A00LF 2GB
Latency
73
Read speed
2,464.8
Write speed
1,620.7
№
2032
RAM
Kingston 99P5471-002 2GB
Latency
73
Read speed
3,135.3
Write speed
2,111.5
№
2033
RAM
Kingston 99U5431-005.A00LF 512MB
Latency
73
Read speed
2,654.8
Write speed
1,414.8
№
2034
RAM
Kingston 9905230-033.A00LF 1GB
Latency
73
Read speed
2,591.5
Write speed
1,046.2
№
2035
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP532S
Latency
73
Read speed
1,587.6
Write speed
618.7
№
2036
RAM
Kingston 9905295-045.A01LF 2GB
Latency
73
Read speed
3,100.4
Write speed
1,313.4
№
2037
RAM
Micron Technology 8HTF12864AY-53EA4 1GB
Latency
73
Read speed
2,809.7
Write speed
1,766.6
№
2038
RAM
Positivo Informatica Ltd 34973-MPO-CL6 2GB
Latency
74
Read speed
3,683.0
Write speed
2,495.5
№
2039
RAM
Positivo Informatica Ltd AU2G32-800P005-P 2GB
Latency
74
Read speed
3,427.4
Write speed
1,612.0
№
2040
RAM
Micron Technology 16HTF12864HY-667G1 1GB
Latency
74
Read speed
2,818.5
Write speed
1,261.3
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Últimas comparações
Ramos Technology RMB4GB58BCA3-13HC 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Kingston KVR533D2N4 512MB
Maxsun MSD44G24Q3 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology M471A1K43CB1-CTD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Kingston K1N7HK-ELC 2GB
Corsair CMK16GX4M2K4266C19 8GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-2400C15-4GRB 4GB
ASint Technology SSA302G08-EGN1C 4GB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6CFR8A-PB 4GB
Samsung M393B1K70CH0-YH9 8GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
V-GEN D4H16GS24A8 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
A-DATA Technology DQKD1A08 1GB
Kingston K821PJ-MID 16GB
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![Mushkin MR[ABC]4U360JNNM16G 16GB](https://ram-comparison.b-cdn.net/images/ram_2.png)