RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Selezionare la RAM 1
Selezionare la RAM 2
Confronto
DDR2 Elenco RAM
Tutti i moduli di memoria, ordinati in base alla latenza crescente
№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
2021
RAM
Samsung M4 70T2953EZ3-CE6 1GB
Latency
73
Read speed
3,510.5
Write speed
1,423.3
№
2022
RAM
Kingston FQ453-80003 1GB
Latency
73
Read speed
2,477.0
Write speed
1,712.2
№
2023
RAM
Samsung M4 70T5669AZ0-CE6 2GB
Latency
73
Read speed
3,139.9
Write speed
1,203.8
№
2024
RAM
Qimonda 64T128020HU3.7A 1GB
Latency
73
Read speed
2,482.4
Write speed
1,267.1
№
2025
RAM
Qimonda 64T128021HDL3SB 1GB
Latency
73
Read speed
3,075.1
Write speed
1,381.2
№
2026
RAM
Apacer Technology 75.963A4.G08 512MB
Latency
73
Read speed
2,810.5
Write speed
1,727.9
№
2027
RAM
Nanya Technology NT256T64UH4A1FN-3C 256MB
Latency
73
Read speed
2,143.5
Write speed
1,013.7
№
2028
RAM
Hynix Semiconductor (Hyundai Electronics) HMP112S6EFR6C-Y5 1GB
Latency
73
Read speed
1,861.6
Write speed
1,246.1
№
2029
RAM
Transcend Information JM367Q643A-6 512MB
Latency
73
Read speed
2,558.1
Write speed
1,531.3
№
2030
RAM
Transcend Information JM667QSU-1G 1GB
Latency
73
Read speed
2,542.4
Write speed
1,295.0
№
2031
RAM
Kingston 99P5439-006.A00LF 2GB
Latency
73
Read speed
2,464.8
Write speed
1,620.7
№
2032
RAM
Kingston 99P5471-002 2GB
Latency
73
Read speed
3,135.3
Write speed
2,111.5
№
2033
RAM
Kingston 99U5431-005.A00LF 512MB
Latency
73
Read speed
2,654.8
Write speed
1,414.8
№
2034
RAM
Kingston 9905230-033.A00LF 1GB
Latency
73
Read speed
2,591.5
Write speed
1,046.2
№
2035
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP532S
Latency
73
Read speed
1,587.6
Write speed
618.7
№
2036
RAM
Kingston 9905295-045.A01LF 2GB
Latency
73
Read speed
3,100.4
Write speed
1,313.4
№
2037
RAM
Micron Technology 8HTF12864AY-53EA4 1GB
Latency
73
Read speed
2,809.7
Write speed
1,766.6
№
2038
RAM
Positivo Informatica Ltd 34973-MPO-CL6 2GB
Latency
74
Read speed
3,683.0
Write speed
2,495.5
№
2039
RAM
Positivo Informatica Ltd AU2G32-800P005-P 2GB
Latency
74
Read speed
3,427.4
Write speed
1,612.0
№
2040
RAM
Micron Technology 16HTF12864HY-667G1 1GB
Latency
74
Read speed
2,818.5
Write speed
1,261.3
«
99
100
101
102
103
104
»
Ultimi confronti
A-DATA Technology DQKD1A08 1GB
Corsair CMSX16GX4M2A3000C16 8GB
Corsair CML8GX3M2A1866C9 4GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3600C16-8GTZN 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CB8GS2400.C8ET 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C16-16GTZRC 16GB
Mushkin 991679ES 996679ES 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Apacer Technology 78.01GA0.9K5 1GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-3600C17-16GTZ 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR16GX4M2C3200C16 8GB
Segnala un bug
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Polski 
中文 
日本語 
