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DDR2 Elenco RAM

Tutti i moduli di memoria, ordinati in base alla latenza crescente

№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
1981
RAM
Elpida EBE21UE8AFSA-8G-F 2GB Elpida EBE21UE8AFSA-8G-F 2GB
Latency
71
Read speed
3,817.6
Write speed
1,703.8
№
1982
RAM
SK Hynix Zhidian4GDDR800 4GB SK Hynix Zhidian4GDDR800 4GB
Latency
71
Read speed
4,549.1
Write speed
3,021.8
№
1983
RAM
Smart Modular SG564288FG8N0IL-Z2 1GB Smart Modular SG564288FG8N0IL-Z2 1GB
Latency
71
Read speed
3,265.3
Write speed
2,042.8
№
1984
RAM
Nanya Technology M2Y2G64TU8HB0J-3C 2GB Nanya Technology M2Y2G64TU8HB0J-3C 2GB
Latency
72
Read speed
3,226.1
Write speed
1,460.8
№
1985
RAM
Micron Technology 8HTF12864HDY-800E1 1GB Micron Technology 8HTF12864HDY-800E1 1GB
Latency
72
Read speed
3,181.0
Write speed
1,426.9
№
1986
RAM
Kingston 9905316-105.A00LF 1GB Kingston 9905316-105.A00LF 1GB
Latency
72
Read speed
2,682.3
Write speed
1,629.3
№
1987
RAM
G Skill Intl F2-8500CL5-2GBPQ 2GB G Skill Intl F2-8500CL5-2GBPQ 2GB
Latency
72
Read speed
4,730.2
Write speed
2,781.6
№
1988
RAM
Swissbit SEU12864D6BG2EP-30 1GB Swissbit SEU12864D6BG2EP-30 1GB
Latency
72
Read speed
2,644.8
Write speed
1,720.3
№
1989
RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB Nanya Technology NT2GT64U8HD0BN-AD 2GB
Latency
72
Read speed
4,241.0
Write speed
1,938.7
№
1990
RAM
Samsung M4 70T5669AZ0-CD5 2GB Samsung M4 70T5669AZ0-CD5 2GB
Latency
72
Read speed
2,086.7
Write speed
1,072.5
№
1991
RAM
Nanya Technology NT2GTT64U88B0UN-3C 2GB Nanya Technology NT2GTT64U88B0UN-3C 2GB
Latency
72
Read speed
3,579.5
Write speed
1,329.0
№
1992
RAM
AMD HCM4G-538KA-CH5 4GB AMD HCM4G-538KA-CH5 4GB
Latency
72
Read speed
5,357.9
Write speed
3,253.3
№
1993
RAM
Hynix Semiconductor (Hyundai Electronics) 99U5429-006.A00LF 4GB Hynix Semiconductor (Hyundai Electronics) 99U5429-006.A00LF 4GB
Latency
72
Read speed
5,367.7
Write speed
3,703.0
№
1994
RAM
takeMS International AG TMS2GB264D082805AE 2GB takeMS International AG TMS2GB264D082805AE 2GB
Latency
72
Read speed
4,468.4
Write speed
3,425.5
№
1995
RAM
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
Latency
72
Read speed
2,733.6
Write speed
703.4
№
1996
RAM
Nanya Technology NT512T64UH8B0FN-3C 512MB Nanya Technology NT512T64UH8B0FN-3C 512MB
Latency
72
Read speed
2,616.5
Write speed
1,323.5
№
1997
RAM
Crucial Technology CT25664AC667.M16FM 2GB Crucial Technology CT25664AC667.M16FM 2GB
Latency
72
Read speed
3,381.8
Write speed
1,591.9
№
1998
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S Hynix Semiconductor (Hyundai Electronics) HYMP112S
Latency
72
Read speed
3,153.0
Write speed
1,497.5
№
1999
RAM
Tower Semiconductor AS6E8E63B-6E1A 512MB Tower Semiconductor AS6E8E63B-6E1A 512MB
Latency
72
Read speed
2,654.8
Write speed
1,094.0
№
2000
RAM
Transcend Information JM388Q643A-5 1GB Transcend Information JM388Q643A-5 1GB
Latency
72
Read speed
2,145.9
Write speed
610.0


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Memoria RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Kingston KVR533D2N4 512MB
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Kingston 9965525-018.A00LF 4GB
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Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Memoria RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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