RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1を選択
RAM 2を選択
比較する
DDR2 RAMリスト
すべてのメモリモジュール、レイテンシーの高い順に並べ替え
№
帯域幅
レイテンシー、ns
読み出し速度、GB/s
書き込み速度、GB/秒
№
1981
RAM
Elpida EBE21UE8AFSA-8G-F 2GB
Latency
71
Read speed
3,817.6
Write speed
1,703.8
№
1982
RAM
SK Hynix Zhidian4GDDR800 4GB
Latency
71
Read speed
4,549.1
Write speed
3,021.8
№
1983
RAM
Smart Modular SG564288FG8N0IL-Z2 1GB
Latency
71
Read speed
3,265.3
Write speed
2,042.8
№
1984
RAM
Nanya Technology M2Y2G64TU8HB0J-3C 2GB
Latency
72
Read speed
3,226.1
Write speed
1,460.8
№
1985
RAM
Micron Technology 8HTF12864HDY-800E1 1GB
Latency
72
Read speed
3,181.0
Write speed
1,426.9
№
1986
RAM
Kingston 9905316-105.A00LF 1GB
Latency
72
Read speed
2,682.3
Write speed
1,629.3
№
1987
RAM
G Skill Intl F2-8500CL5-2GBPQ 2GB
Latency
72
Read speed
4,730.2
Write speed
2,781.6
№
1988
RAM
Swissbit SEU12864D6BG2EP-30 1GB
Latency
72
Read speed
2,644.8
Write speed
1,720.3
№
1989
RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Latency
72
Read speed
4,241.0
Write speed
1,938.7
№
1990
RAM
Samsung M4 70T5669AZ0-CD5 2GB
Latency
72
Read speed
2,086.7
Write speed
1,072.5
№
1991
RAM
Nanya Technology NT2GTT64U88B0UN-3C 2GB
Latency
72
Read speed
3,579.5
Write speed
1,329.0
№
1992
RAM
AMD HCM4G-538KA-CH5 4GB
Latency
72
Read speed
5,357.9
Write speed
3,253.3
№
1993
RAM
Hynix Semiconductor (Hyundai Electronics) 99U5429-006.A00LF 4GB
Latency
72
Read speed
5,367.7
Write speed
3,703.0
№
1994
RAM
takeMS International AG TMS2GB264D082805AE 2GB
Latency
72
Read speed
4,468.4
Write speed
3,425.5
№
1995
RAM
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
Latency
72
Read speed
2,733.6
Write speed
703.4
№
1996
RAM
Nanya Technology NT512T64UH8B0FN-3C 512MB
Latency
72
Read speed
2,616.5
Write speed
1,323.5
№
1997
RAM
Crucial Technology CT25664AC667.M16FM 2GB
Latency
72
Read speed
3,381.8
Write speed
1,591.9
№
1998
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S
Latency
72
Read speed
3,153.0
Write speed
1,497.5
№
1999
RAM
Tower Semiconductor AS6E8E63B-6E1A 512MB
Latency
72
Read speed
2,654.8
Write speed
1,094.0
№
2000
RAM
Transcend Information JM388Q643A-5 1GB
Latency
72
Read speed
2,145.9
Write speed
610.0
«
97
98
99
100
101
102
»
最新の比較
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A5143DB0-CPB 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Samsung M393B2G70BH0-CK0 16GB
V-Color Technology Inc. TA48G36S818BN 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
AMD R538G1601U2S-UO 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3000C16-16GTZR 16GB
バグを報告する
×
Bug description
Source link