RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
1981
RAM
Elpida EBE21UE8AFSA-8G-F 2GB
Latency
71
Read speed
3,817.6
Write speed
1,703.8
№
1982
RAM
SK Hynix Zhidian4GDDR800 4GB
Latency
71
Read speed
4,549.1
Write speed
3,021.8
№
1983
RAM
Smart Modular SG564288FG8N0IL-Z2 1GB
Latency
71
Read speed
3,265.3
Write speed
2,042.8
№
1984
RAM
Nanya Technology M2Y2G64TU8HB0J-3C 2GB
Latency
72
Read speed
3,226.1
Write speed
1,460.8
№
1985
RAM
Micron Technology 8HTF12864HDY-800E1 1GB
Latency
72
Read speed
3,181.0
Write speed
1,426.9
№
1986
RAM
Kingston 9905316-105.A00LF 1GB
Latency
72
Read speed
2,682.3
Write speed
1,629.3
№
1987
RAM
G Skill Intl F2-8500CL5-2GBPQ 2GB
Latency
72
Read speed
4,730.2
Write speed
2,781.6
№
1988
RAM
Swissbit SEU12864D6BG2EP-30 1GB
Latency
72
Read speed
2,644.8
Write speed
1,720.3
№
1989
RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Latency
72
Read speed
4,241.0
Write speed
1,938.7
№
1990
RAM
Samsung M4 70T5669AZ0-CD5 2GB
Latency
72
Read speed
2,086.7
Write speed
1,072.5
№
1991
RAM
Nanya Technology NT2GTT64U88B0UN-3C 2GB
Latency
72
Read speed
3,579.5
Write speed
1,329.0
№
1992
RAM
AMD HCM4G-538KA-CH5 4GB
Latency
72
Read speed
5,357.9
Write speed
3,253.3
№
1993
RAM
Hynix Semiconductor (Hyundai Electronics) 99U5429-006.A00LF 4GB
Latency
72
Read speed
5,367.7
Write speed
3,703.0
№
1994
RAM
takeMS International AG TMS2GB264D082805AE 2GB
Latency
72
Read speed
4,468.4
Write speed
3,425.5
№
1995
RAM
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
Latency
72
Read speed
2,733.6
Write speed
703.4
№
1996
RAM
Nanya Technology NT512T64UH8B0FN-3C 512MB
Latency
72
Read speed
2,616.5
Write speed
1,323.5
№
1997
RAM
Crucial Technology CT25664AC667.M16FM 2GB
Latency
72
Read speed
3,381.8
Write speed
1,591.9
№
1998
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S
Latency
72
Read speed
3,153.0
Write speed
1,497.5
№
1999
RAM
Tower Semiconductor AS6E8E63B-6E1A 512MB
Latency
72
Read speed
2,654.8
Write speed
1,094.0
№
2000
RAM
Transcend Information JM388Q643A-5 1GB
Latency
72
Read speed
2,145.9
Write speed
610.0
«
97
98
99
100
101
102
»
最新比较
Kingston 99U5469-045.A00LF 4GB
Corsair CMW32GX4M2D3600C18 16GB
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C15-8GTZKO 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston XW21KG-MIE2 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMT16GX4M2C3466C16 8GB
Kingston 9905471-071.A00LF 8GB
Mushkin MRA4S293MMMF32G 32GB
Samsung M395T2863QZ4-CF76 1GB
V-GEN D4M8GL26A8TS6 8GB
Corsair CMX4GX3M1A1333C9 4GB
Panram International Corporation W4N2666PS-8G 8GB
Crucial Technology CT2K102464BD160B 8GB
Kingston 9965589-008.D01G 8GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMK16GX4M2E4333C19 8GB
Samsung M471B5673FH0-CF8 2GB
V-Color Technology Inc. TA48G36S818BNK 8GB
Samsung M393B5170FH0-CK0 4GB
Golden Empire CL16-18-18 D4-3400 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMD16GX4M4A2800C16 4GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
