RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1を選択
RAM 2を選択
比較する
DDR2 RAMリスト
すべてのメモリモジュール、レイテンシーの高い順に並べ替え
№
帯域幅
レイテンシー、ns
読み出し速度、GB/s
書き込み速度、GB/秒
№
2381
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP325S64AMP8-C4 2GB
Latency
94
Read speed
1,729.5
Write speed
1,829.7
№
2382
RAM
Transcend Information TS256MFB72V6U-T 1GB
Latency
94
Read speed
3,248.0
Write speed
2,310.4
№
2383
RAM
A-DATA Technology ADOVE1A0834E 1GB
Latency
94
Read speed
1,882.0
Write speed
1,165.4
№
2384
RAM
Samsung M3 93T5160FBA-CE6 4GB
Latency
95
Read speed
2,273.5
Write speed
1,798.8
№
2385
RAM
Swissbit MEN01G64D1BF1EP-30 1GB
Latency
95
Read speed
1,244.7
Write speed
610.3
№
2386
RAM
Samsung M395T2953GZ4-CE66 1GB
Latency
95
Read speed
2,733.7
Write speed
2,088.3
№
2387
RAM
Kingmax Semiconductor KSCD48F-A8KB5 1GB
Latency
95
Read speed
2,916.8
Write speed
1,067.0
№
2388
RAM
Samsung M395T5663QZ4-CF76 2GB
Latency
95
Read speed
3,175.2
Write speed
2,359.5
№
2389
RAM
Qimonda 72T256420HFA3SB 2GB
Latency
95
Read speed
3,037.1
Write speed
1,945.8
№
2390
RAM
SK Hynix HYMP112F72CP8D3-S5 1GB
Latency
95
Read speed
3,389.6
Write speed
2,586.3
№
2391
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351P72AMP4-Y5 4GB
Latency
95
Read speed
3,009.4
Write speed
2,550.7
№
2392
RAM
Catalyst 02GN80KFUA8 2GB
Latency
95
Read speed
2,654.8
Write speed
2,239.1
№
2393
RAM
INDUSYS GmbH EMSS12864Q5166 1GB
Latency
96
Read speed
1,167.5
Write speed
404.7
№
2394
RAM
Qimonda 72T128420HFN3SA 1GB
Latency
96
Read speed
3,117.5
Write speed
1,907.4
№
2395
RAM
Qimonda 72T256220HP3SB 2GB
Latency
96
Read speed
2,971.3
Write speed
2,559.4
№
2396
RAM
Qimonda 72T256420EFA3SB2 2GB
Latency
96
Read speed
2,666.6
Write speed
1,959.1
№
2397
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F72CP8N3-Y5 2GB
Latency
96
Read speed
2,856.3
Write speed
1,887.1
№
2398
RAM
Kingston 99U5293-016.A00LF 1GB
Latency
96
Read speed
1,795.1
Write speed
1,300.2
№
2399
RAM
Transcend Information TS128MSQ64V6J 1GB
Latency
96
Read speed
1,782.8
Write speed
1,141.7
№
2400
RAM
ASint Technology B1YJ2SG4FN8 2GB
Latency
96
Read speed
2,637.6
Write speed
806.3
«
117
118
119
120
121
122
»
最新の比較
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMW16GX4M2C3200C16 8GB
Kingston 9965516-112.A00LF 16GB
SK Hynix HMA82GR7AFR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMK8GX4M2B3600C18 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-2800C15-8GTZB 8GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A1K43BB1-CTD 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kllisre 0000 8GB
ASint Technology SSA302G08-EGN1C 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Corsair CMT32GX4M4C3200C14 8GB
Kingston KHX318C10FR/8G 8GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
A-DATA Technology DDR3 1600 4GB
Samsung M471A2K43EB1-CWE 16GB
Kingston 9905471-001.A01LF 2GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
バグを報告する
×
Bug description
Source link