RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Select RAM 1
Select RAM 2
Porównaj
DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
2381
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP325S64AMP8-C4 2GB
Latency
94
Read speed
1,729.5
Write speed
1,829.7
№
2382
RAM
Transcend Information TS256MFB72V6U-T 1GB
Latency
94
Read speed
3,248.0
Write speed
2,310.4
№
2383
RAM
A-DATA Technology ADOVE1A0834E 1GB
Latency
94
Read speed
1,882.0
Write speed
1,165.4
№
2384
RAM
Samsung M3 93T5160FBA-CE6 4GB
Latency
95
Read speed
2,273.5
Write speed
1,798.8
№
2385
RAM
Swissbit MEN01G64D1BF1EP-30 1GB
Latency
95
Read speed
1,244.7
Write speed
610.3
№
2386
RAM
Samsung M395T2953GZ4-CE66 1GB
Latency
95
Read speed
2,733.7
Write speed
2,088.3
№
2387
RAM
Kingmax Semiconductor KSCD48F-A8KB5 1GB
Latency
95
Read speed
2,916.8
Write speed
1,067.0
№
2388
RAM
Samsung M395T5663QZ4-CF76 2GB
Latency
95
Read speed
3,175.2
Write speed
2,359.5
№
2389
RAM
Qimonda 72T256420HFA3SB 2GB
Latency
95
Read speed
3,037.1
Write speed
1,945.8
№
2390
RAM
SK Hynix HYMP112F72CP8D3-S5 1GB
Latency
95
Read speed
3,389.6
Write speed
2,586.3
№
2391
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351P72AMP4-Y5 4GB
Latency
95
Read speed
3,009.4
Write speed
2,550.7
№
2392
RAM
Catalyst 02GN80KFUA8 2GB
Latency
95
Read speed
2,654.8
Write speed
2,239.1
№
2393
RAM
INDUSYS GmbH EMSS12864Q5166 1GB
Latency
96
Read speed
1,167.5
Write speed
404.7
№
2394
RAM
Qimonda 72T128420HFN3SA 1GB
Latency
96
Read speed
3,117.5
Write speed
1,907.4
№
2395
RAM
Qimonda 72T256220HP3SB 2GB
Latency
96
Read speed
2,971.3
Write speed
2,559.4
№
2396
RAM
Qimonda 72T256420EFA3SB2 2GB
Latency
96
Read speed
2,666.6
Write speed
1,959.1
№
2397
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F72CP8N3-Y5 2GB
Latency
96
Read speed
2,856.3
Write speed
1,887.1
№
2398
RAM
Kingston 99U5293-016.A00LF 1GB
Latency
96
Read speed
1,795.1
Write speed
1,300.2
№
2399
RAM
Transcend Information TS128MSQ64V6J 1GB
Latency
96
Read speed
1,782.8
Write speed
1,141.7
№
2400
RAM
ASint Technology B1YJ2SG4FN8 2GB
Latency
96
Read speed
2,637.6
Write speed
806.3
«
117
118
119
120
121
122
»
Najnowsze porównania
Kingston ACR512X64D3S13C9G 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Corsair CMK8GX4M2A2800C16 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMD32GX4M4B3200C16 8GB
Kingston 9965525-144.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-2666C16-8GRB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMN32GX4M2Z3600C16 16GB
Corsair CM5S16GM4800A40K2 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMN1740HC48D8F667A 2GB
Corsair CMT32GX4M4C3200C14 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3200C15-16GTZKY 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kllisre M471A3243BB0-CP50 16GB
Samsung M393B1K70QB0-CK0 8GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK8GX4M2B3733C17 4GB
Zgłoś błąd
×
Bug description
Source link