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Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2381
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP325S64AMP8-C4 2GB
Latency
94
Read speed
1,729.5
Write speed
1,829.7
№
2382
RAM
Transcend Information TS256MFB72V6U-T 1GB
Latency
94
Read speed
3,248.0
Write speed
2,310.4
№
2383
RAM
A-DATA Technology ADOVE1A0834E 1GB
Latency
94
Read speed
1,882.0
Write speed
1,165.4
№
2384
RAM
Samsung M3 93T5160FBA-CE6 4GB
Latency
95
Read speed
2,273.5
Write speed
1,798.8
№
2385
RAM
Swissbit MEN01G64D1BF1EP-30 1GB
Latency
95
Read speed
1,244.7
Write speed
610.3
№
2386
RAM
Samsung M395T2953GZ4-CE66 1GB
Latency
95
Read speed
2,733.7
Write speed
2,088.3
№
2387
RAM
Kingmax Semiconductor KSCD48F-A8KB5 1GB
Latency
95
Read speed
2,916.8
Write speed
1,067.0
№
2388
RAM
Samsung M395T5663QZ4-CF76 2GB
Latency
95
Read speed
3,175.2
Write speed
2,359.5
№
2389
RAM
Qimonda 72T256420HFA3SB 2GB
Latency
95
Read speed
3,037.1
Write speed
1,945.8
№
2390
RAM
SK Hynix HYMP112F72CP8D3-S5 1GB
Latency
95
Read speed
3,389.6
Write speed
2,586.3
№
2391
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351P72AMP4-Y5 4GB
Latency
95
Read speed
3,009.4
Write speed
2,550.7
№
2392
RAM
Catalyst 02GN80KFUA8 2GB
Latency
95
Read speed
2,654.8
Write speed
2,239.1
№
2393
RAM
INDUSYS GmbH EMSS12864Q5166 1GB
Latency
96
Read speed
1,167.5
Write speed
404.7
№
2394
RAM
Qimonda 72T128420HFN3SA 1GB
Latency
96
Read speed
3,117.5
Write speed
1,907.4
№
2395
RAM
Qimonda 72T256220HP3SB 2GB
Latency
96
Read speed
2,971.3
Write speed
2,559.4
№
2396
RAM
Qimonda 72T256420EFA3SB2 2GB
Latency
96
Read speed
2,666.6
Write speed
1,959.1
№
2397
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F72CP8N3-Y5 2GB
Latency
96
Read speed
2,856.3
Write speed
1,887.1
№
2398
RAM
Kingston 99U5293-016.A00LF 1GB
Latency
96
Read speed
1,795.1
Write speed
1,300.2
№
2399
RAM
Transcend Information TS128MSQ64V6J 1GB
Latency
96
Read speed
1,782.8
Write speed
1,141.7
№
2400
RAM
ASint Technology B1YJ2SG4FN8 2GB
Latency
96
Read speed
2,637.6
Write speed
806.3
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Последние сравнения
Kingston 9965525-018.A00LF 4GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Corsair VSA2GSDS667C4 2GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905599-010.A00G 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kllisre M471A1K43CB1-CTD 8GB
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-3200C16-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW128GX4M4D3000C16 32GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
AMD R5S38G1601U2S 8GB
Kingston 9905625-139.A00G 16GB
Kingston 99U5474-010.A00LF 2GB
Heoriady HX2666CX15D4/4G 4GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Corsair CMK16GX4M2K4266C16 8GB
G Skill Intl F4-4000C18-8GVK 8GB
A-DATA Technology DOVF1B163G2G 2GB
Transcend Information TS512MLH64V1H 4GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Samsung M378A1G43DB0-CPB 8GB
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