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Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3200C16-4GVRB 4GB

Crucial Technology CT51264AC800.C16FC 4GB vs G Skill Intl F4-3200C16-4GVRB 4GB

总分
star star star star star
Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分
star star star star star
G Skill Intl F4-3200C16-4GVRB 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

差异 规格 评论

差异

Crucial Technology CT51264AC800.C16FC 4GB 需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,378.6 left arrow 13.7
    测试中的平均数值
G Skill Intl F4-3200C16-4GVRB 4GB 需要考虑的原因
G Skill Intl F4-3200C16-4GVRB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 62
    左右 -130% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 27
  • 读取速度，GB/s
    4,670.6 left arrow 18.5
  • 写入速度，GB/s
    2,378.6 left arrow 13.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    861 left arrow 3061

Crucial Technology CT51264AC800.C16FC 4GB RAM的比较

Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB

G Skill Intl F4-3200C16-4GVRB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Corsair CMD16GX4M2B3200C16 8GB
Corsair CMD16GX4M2B3200C16 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Elpida EBE21UE8AEFA-8G-E 2GB
Elpida EBE21UE8AEFA-8G-E 2GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
内存RAM
Kingston KHX1600C10D3/8GXF 8GB
Kingston KHX1600C10D3/8GXF 8GB
G Skill Intl F4-3600C14-16GTZN 16GB
G Skill Intl F4-3600C14-16GTZN 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Ramaxel Technology RMT3170MP68F9F1600 4GB
Ramaxel Technology RMT3170MP68F9F1600 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston ACR32D4S2S8ME-16 16GB
Kingston ACR32D4S2S8ME-16 16GB
内存RAM
Kingston 9905469-153.A00LF 4GB
Kingston 9905469-153.A00LF 4GB
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Asgard VMA41UH-MEC1U2AW1 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9965596-002.B00G 4GB
Kingston 9965596-002.B00G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C18-32GTZR 32GB
G Skill Intl F4-4000C18-32GTZR 32GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Essencore Limited KD4AGU880-32A160U 16GB
Essencore Limited KD4AGU880-32A160U 16GB
内存RAM