Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

总分
star star star star star
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

差异

  • 更快的读取速度,GB/s
    16 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度,GB/s
    11.2 left arrow 9.9
    测试中的平均数值
  • 更高的内存带宽,mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
  • 低于PassMark测试中的延时,ns
    25 left arrow 28
    左右 -12% 更低的延时

规格

完整的技术规格清单
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    28 left arrow 25
  • 读取速度,GB/s
    16.0 left arrow 14.6
  • 写入速度,GB/s
    11.2 left arrow 9.9
  • 内存带宽,mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2901 left arrow 2427
RAM Latency Calculator
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最新比较