RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4SFS8266.C8FJ 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Crucial Technology CT8G4SFS8266.C8FJ 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
39
左右 38% 更低的延时
更快的写入速度,GB/s
12.5
10.5
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFS8266.C8FJ 8GB
报告一个错误
更快的读取速度,GB/s
16.1
16
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
39
读取速度,GB/s
16.0
16.1
写入速度,GB/s
12.5
10.5
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
2815
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Kingston 9905403-437.A01LF 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Kingston KVR533D2N4 512MB
Kingston 9965596-031.B00G 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston K6VDX7-HYD 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3733C17-16GTZR 16GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMD16GX4M2K4133C19 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C14-16GVKA 16GB
AMD R5316G1609U2K 8GB
Kingston 99U5712-002.A00G 16GB
Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Kingston KHX1866C10D3/8GX 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
报告一个错误
×
Bug description
Source link