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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3300C16-4GRRD 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3300C16-4GRRD 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3300C16-4GRRD 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 17% 更低的延时
更快的读取速度,GB/s
16
13.9
测试中的平均数值
更快的写入速度,GB/s
12.5
11.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3300C16-4GRRD 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3300C16-4GRRD 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
29
读取速度,GB/s
16.0
13.9
写入速度,GB/s
12.5
11.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2821
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3300C16-4GRRD 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-061.A00LF 2GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
Samsung M393B1G70QH0-YK0 8GB
Mushkin 99[2/7/4]200F 8GB
Apacer Technology 78.01G86.9H50C 1GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK64GX4M2A2666C16 32GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 9905625-004.A03LF 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C18-8GTZR 8GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology D12.2326WH.001 16GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M471A2K43EB1-CTD 16GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3000C15-8GRBB 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenzen Recadata Storage Technology 8GB
Kingston 99U5471-020.A00LF 4GB
Micron Technology TEAMGROUP-UD4-2400 16GB
报告一个错误
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Bug description
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