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Samsung M378B5673EH1-CF8 2GB
Team Group Inc. DDR4 2666 8GB

Samsung M378B5673EH1-CF8 2GB vs Team Group Inc. DDR4 2666 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Team Group Inc. DDR4 2666 8GB

Team Group Inc. DDR4 2666 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Team Group Inc. DDR4 2666 8GB 需要考虑的原因
Team Group Inc. DDR4 2666 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Team Group Inc. DDR4 2666 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 28
  • 读取速度，GB/s
    12.7 left arrow 13.0
  • 写入速度，GB/s
    7.5 left arrow 10.4
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2757

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Team Group Inc. DDR4 2666 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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最新比较

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PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
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内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
G Skill Intl F3-2400C11-8GXM 8GB
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内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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A-DATA Technology AE4S240038G17-BHYA 8GB
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内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Patriot Memory (PDP Systems) 2666 C18 Series 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C15-8GRK 8GB
G Skill Intl F4-3000C15-8GRK 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2400C17-8GIS 8GB
G Skill Intl F4-2400C17-8GIS 8GB
内存RAM
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Corsair CMD8GX3M2A2933C12 4GB
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Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMSX64GX4M2A3200C22 32GB
Corsair CMSX64GX4M2A3200C22 32GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB
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内存RAM
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A-DATA Technology DOVF1B163G2G 2GB
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Corsair CMD64GX4M4A2666C15 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Crucial Technology BLT8G4D30BET4K.C8FD 8GB
内存RAM