RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Compare
A-DATA Technology DQVE1908 512MB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
16.5
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Report a bug
Below the latency in the PassMark tests, ns
53
66
Around -25% lower latency
Faster write speed, GB/s
9.6
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
53
Read speed, GB/s
2,775.5
16.5
Write speed, GB/s
1,557.9
9.6
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
2301
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2666C15-4GVR 4GB
SK Hynix DDR2 800 2G 2GB
Kingston CBD24D4S7D8MB-16 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Apacer Technology 78.D2GFH.4030B 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hewlett-Packard 7TE39AA#ABC 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology J642GU42J5213N1 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB
Kingston 99U5584-017.A00LF 4GB
Kingston XJV223-MIE-NX 16GB
Corsair CMD16GX3M4A2666C11 4GB
Samsung M471A2K43BB1-CTD 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingston ACR256X64D3S1333C9 2GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMSX16GX4M1A2666C18 16GB
Kingston 9905403-447.A00LF 4GB
Kingston KHX3200C18D4/4G 4GB
Report a bug
×
Bug description
Source link