RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Compare
A-DATA Technology DQVE1908 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
17.5
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
66
Around -187% lower latency
Faster write speed, GB/s
14.6
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
23
Read speed, GB/s
2,775.5
17.5
Write speed, GB/s
1,557.9
14.6
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
382
3260
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Samsung M471B5673FH0-CF8 2GB
Corsair CMK32GX4M2C3333C16 16GB
AMD AE34G1601U1 4GB
Kingston 99U5663-006.A00G 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Shenzhen Technology Co Ltd 8GB
PNY Electronics PNY 2GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Lexar Co Limited LD4AS016G-H2666G 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-2400C16-8GFXR 8GB
Hexon Technology Pte Ltd HEXON 1GB
Hewlett-Packard 7EH74AA#ABC 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4000C18-32GTZR 32GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
AMD AE34G2139U2 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston KF2933C17S4/16G 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMSX16GX4M2A3200C22 8GB
Report a bug
×
Bug description
Source link