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A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
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Faster reading speed, GB/s
4
14.3
Average value in the tests
Faster write speed, GB/s
2,061.2
11.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
46
Around -64% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
28
Read speed, GB/s
4,937.3
14.3
Write speed, GB/s
2,061.2
11.4
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
759
2481
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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