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A-DATA Technology VDQVE1B16 2GB
Samsung M378A5244CB0-CVF 4GB

A-DATA Technology VDQVE1B16 2GB vs Samsung M378A5244CB0-CVF 4GB

Overall score
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Overall score
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

Differences Specifications Comments

Differences

A-DATA Technology VDQVE1B16 2GB Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 16
    Average value in the tests
  • Faster write speed, GB/s
    2,061.2 left arrow 12.3
    Average value in the tests
Samsung M378A5244CB0-CVF 4GB Reasons to consider
Samsung M378A5244CB0-CVF 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 46
    Around -53% lower latency
  • Higher memory bandwidth, mbps
    23400 left arrow 6400
    Around 3.66 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 30
  • Read speed, GB/s
    4,937.3 left arrow 16.0
  • Write speed, GB/s
    2,061.2 left arrow 12.3
  • Memory bandwidth, mbps
    6400 left arrow 23400
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    759 left arrow 2709

A-DATA Technology VDQVE1B16 2GB RAM comparisons

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Samsung M378A5244CB0-CVF 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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