RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
AMD R5316G1609U2K 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
AMD R5316G1609U2K 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
AMD R5316G1609U2K 8GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
AMD R5316G1609U2K 8GB
Report a bug
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Below the latency in the PassMark tests, ns
71
73
Around -3% lower latency
Faster reading speed, GB/s
15.6
6.3
Average value in the tests
Faster write speed, GB/s
6.4
5.2
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
AMD R5316G1609U2K 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
73
71
Read speed, GB/s
6.3
15.6
Write speed, GB/s
5.2
6.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1309
1650
AMD R5316G1609U2K 8GB RAM comparisons
Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378T5663QZ3-CF7 2GB
Corsair CMK64GX4M8A2400C14 8GB
SK Hynix HMT351S6BFR8C-H9 4GB
Kingston HP26D4U9D8HC-16X 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C19-8GSXF 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
AMD R5316G1609U2K 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Kingston 9905402-665.A00LF 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Kingston 99U5458-008.A00LF 4GB
G Skill Intl F4-2133C15-16GFXR 16GB
Samsung M471B1G73QH0-YK0 8GB
Kingston RB26D4U9D8MEH-16 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
A-DATA Technology DOVF1B163G2G 2GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Kingston KHX4266C19D4/8GX 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Apacer Technology 78.B1GN3.4032B 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA82GR7AFR8N-UH 16GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-2400C15-4GRR 4GB
Report a bug
×
Bug description
Source link