RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
AMD R538G1601U2S 8GB
Samsung M474A1G43DB0-CPB 8GB

AMD R538G1601U2S 8GB vs Samsung M474A1G43DB0-CPB 8GB

Overall score
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Overall score
star star star star star
Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Differences Specifications Comments

Differences

AMD R538G1601U2S 8GB Reasons to consider
AMD R538G1601U2S 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    19 left arrow 27
    Around 30% lower latency
  • Faster reading speed, GB/s
    18.4 left arrow 9.7
    Average value in the tests
  • Faster write speed, GB/s
    12.3 left arrow 6.8
    Average value in the tests
Samsung M474A1G43DB0-CPB 8GB Reasons to consider
Samsung M474A1G43DB0-CPB 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
AMD R538G1601U2S 8GB
Samsung M474A1G43DB0-CPB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    19 left arrow 27
  • Read speed, GB/s
    18.4 left arrow 9.7
  • Write speed, GB/s
    12.3 left arrow 6.8
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    3189 left arrow 1767

AMD R538G1601U2S 8GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Samsung M474A1G43DB0-CPB 8GB RAM comparisons

Corsair CM5S16GM4800A40N2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
Memory RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Memory RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Samsung M474A1G43DB0-CPB 8GB
Samsung M474A1G43DB0-CPB 8GB
Memory RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMD32GX4M2A2800C16 16GB
Corsair CMD32GX4M2A2800C16 16GB
Memory RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Kingston 9965662-010.A00G 16GB
Kingston 9965662-010.A00G 16GB
Memory RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMD16GX4M2A2400C14 8GB
Corsair CMD16GX4M2A2400C14 8GB
Memory RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Memory RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
Memory RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology AFSD416ES1P 16GB
Micron Technology AFSD416ES1P 16GB
Memory RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
Memory RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMK16GX4M2C3200C16 8GB
Corsair CMK16GX4M2C3200C16 8GB
Memory RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Kingston 9905704-007.A00G 4GB
Kingston 9905704-007.A00G 4GB
Memory RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
Memory RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston KHX2400C14S4/4G 4GB
Kingston KHX2400C14S4/4G 4GB
Memory RAM