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Corsair CMD16GX3M4A2666C11 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Compare
Corsair CMD16GX3M4A2666C11 4GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Overall score
Corsair CMD16GX3M4A2666C11 4GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMD16GX3M4A2666C11 4GB
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Below the latency in the PassMark tests, ns
25
74
Around 66% lower latency
Faster reading speed, GB/s
18.6
13.6
Average value in the tests
Faster write speed, GB/s
12.9
7.7
Average value in the tests
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Report a bug
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMD16GX3M4A2666C11 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
74
Read speed, GB/s
18.6
13.6
Write speed, GB/s
12.9
7.7
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
3236
1616
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
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Absolute Latency
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