RAM comparison Corsair CMY8GX3M2A2666C10 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Corsair CMY8GX3M2A2666C10 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Overall score

Corsair CMY8GX3M2A2666C10 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Faster write speed, GB/s

17.2 15.4

Average value in the tests
Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Complete list of technical specifications

Corsair CMY8GX3M2A2666C10 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

3391 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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