RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Compare
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Micron Technology 8ATF1G64AZ-3G2J1 8GB
Overall score
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Overall score
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Report a bug
Below the latency in the PassMark tests, ns
24
29
Around 17% lower latency
Reasons to consider
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Report a bug
Faster reading speed, GB/s
15.8
15.5
Average value in the tests
Faster write speed, GB/s
12.2
11.0
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
29
Read speed, GB/s
15.5
15.8
Write speed, GB/s
11.0
12.2
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2445
2988
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Samsung M393B2G70BH0-CK0 16GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Samsung M471B5273CH0-CH9 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA851S6CJR6N-VK 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston XW21KG-HYD-NX 8GB
Kingston 9965525-140.A00LF 8GB
Samsung M471A5244CB0-CWE 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905783-025.A01G 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-3333C16-16GTZB 16GB
Protocol Engines Kingrock 800 2GB 2GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Kingston 9905471-002.A00LF 2GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT32G4SFD832A.M16FF 32GB
Report a bug
×
Bug description
Source link