RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLT2G3D1608DT1TX0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Compare
Crucial Technology BLT2G3D1608DT1TX0 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Overall score
Crucial Technology BLT2G3D1608DT1TX0 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLT2G3D1608DT1TX0 2GB
Report a bug
Below the latency in the PassMark tests, ns
23
27
Around 15% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Report a bug
Faster reading speed, GB/s
14.6
13.6
Average value in the tests
Faster write speed, GB/s
10.5
9.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLT2G3D1608DT1TX0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
27
Read speed, GB/s
13.6
14.6
Write speed, GB/s
9.4
10.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2096
2409
Crucial Technology BLT2G3D1608DT1TX0 2GB RAM comparisons
Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273DH0-CK0 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Samsung M395T5160QZ4-CE66 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Kingston 99U5403-465.A00LF 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Samsung M393B1K70CH0-YH9 8GB
Apacer Technology 78.C1GMW.AUC0B 8GB
AMD R538G1601U2S 8GB
A-DATA Technology DDR4 3600 8GB
Kingston KVR800D2N6/2G 2GB
SK Hynix HMA82GR7AFR8N-UH 16GB
G Skill Intl F3-2666C12-8GTXD 8GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3600C16-16GVKC 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M393A1G43DB1-CRC 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Hewlett-Packard 7EH74AA#ABC 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2133C15-16GIS 16GB
Kingston KP4T2F-PSB 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Report a bug
×
Bug description
Source link