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Crucial Technology CB8GS2666.C8ET 8GB
Samsung M471A1K43CB1-CTD 8GB

Crucial Technology CB8GS2666.C8ET 8GB vs Samsung M471A1K43CB1-CTD 8GB

Overall score
star star star star star
Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

Overall score
star star star star star
Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

Differences Specifications Comments

Differences

Crucial Technology CB8GS2666.C8ET 8GB Reasons to consider
Crucial Technology CB8GS2666.C8ET 8GB
Report a bug
Samsung M471A1K43CB1-CTD 8GB Reasons to consider
Samsung M471A1K43CB1-CTD 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 39
    Around -18% lower latency
  • Faster reading speed, GB/s
    15.8 left arrow 14
    Average value in the tests
  • Faster write speed, GB/s
    11.9 left arrow 9.1
    Average value in the tests

Specifications

Complete list of technical specifications
Crucial Technology CB8GS2666.C8ET 8GB
Samsung M471A1K43CB1-CTD 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    39 left arrow 33
  • Read speed, GB/s
    14.0 left arrow 15.8
  • Write speed, GB/s
    9.1 left arrow 11.9
  • Memory bandwidth, mbps
    21300 left arrow 21300
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2221 left arrow 2824

Crucial Technology CB8GS2666.C8ET 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A1K43CB1-CTD 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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