RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT25664BA160B.C16F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Compare
Crucial Technology CT25664BA160B.C16F 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Overall score
Crucial Technology CT25664BA160B.C16F 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT25664BA160B.C16F 2GB
Report a bug
Below the latency in the PassMark tests, ns
29
31
Around 6% lower latency
Faster reading speed, GB/s
14.3
11.8
Average value in the tests
Faster write speed, GB/s
10.1
8.1
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT25664BA160B.C16F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
31
Read speed, GB/s
14.3
11.8
Write speed, GB/s
10.1
8.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2227
2354
Crucial Technology CT25664BA160B.C16F 2GB RAM comparisons
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT25664BA160B.C16F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Kingston 99U5584-004.A00LF 4GB
Corsair CMH32GX4M2Z3600C18 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Mushkin 99[2/7/4]200[F/T] 8GB
Samsung M378B5173BH0-CH9 4GB
Corsair CM4B8G2J2133A15S 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C15-16GTZR 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C14-8GTZR 8GB
A-DATA Technology DDR4 2666 8GB
Kingston 9905625-097.A00G 16GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-4000C18-32GTRS 32GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Kingston 99U5474-037.A00LF 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Crucial Technology CT51264AC800.C16FC 4GB
Apacer Technology 78.CAGN4.4020B 8GB
Report a bug
×
Bug description
Source link