RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Compare
Crucial Technology CT51264BA1339.D16F 4GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB
Overall score
Crucial Technology CT51264BA1339.D16F 4GB
Overall score
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BA1339.D16F 4GB
Report a bug
Reasons to consider
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
39
Around -39% lower latency
Faster reading speed, GB/s
17.4
13.2
Average value in the tests
Faster write speed, GB/s
13.1
8.2
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
28
Read speed, GB/s
13.2
17.4
Write speed, GB/s
8.2
13.1
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2165
3437
Crucial Technology CT51264BA1339.D16F 4GB RAM comparisons
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
Team Group Inc. ZEUS-2133 8GB
Heoriady M378A1K43BB2-CTD 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-5333C22-8GTRG 8GB
AMD AE34G1601U1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
G Skill Intl F5-6400J3239G16G 16GB
V-GEN D4H4GL30A8TS5 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Ramsta Ramsta-2400Mhz-8G 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Kingston 99U5474-013.A00LF 2GB
Apacer Technology GD2.1827CS.003 8GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston CBD24D4S7S8MB-8 8GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-4133C17-8GTZR 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F4-3200C16-8GIS 8GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F5-6400J3239G16G 16GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Report a bug
×
Bug description
Source link