RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ10UE8BAFA-AE-E 1GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Compare
Elpida EBJ10UE8BAFA-AE-E 1GB vs V-Color Technology Inc. TN48G26S819-SB 8GB
Overall score
Elpida EBJ10UE8BAFA-AE-E 1GB
Overall score
V-Color Technology Inc. TN48G26S819-SB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ10UE8BAFA-AE-E 1GB
Report a bug
Reasons to consider
V-Color Technology Inc. TN48G26S819-SB 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
65
Around -160% lower latency
Faster reading speed, GB/s
16.8
6.1
Average value in the tests
Faster write speed, GB/s
13.6
4.2
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ10UE8BAFA-AE-E 1GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
65
25
Read speed, GB/s
6.1
16.8
Write speed, GB/s
4.2
13.6
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
985
2889
Elpida EBJ10UE8BAFA-AE-E 1GB RAM comparisons
Corsair CM3X1G1600C9 1GB
Corsair CM4X8GF2666C16K8 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ10UE8BAFA-AE-E 1GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
A-DATA Technology DQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston ACR26D4U9D8MH-16 16GB
Samsung M471B1G73QH0-YK0 8GB
Kingston KTD3KX-MIB 8GB
AMD R534G1601U1S-UO 4GB
Samsung M471A5244CB0-CRC 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4800C20-16GTZR 16GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMW16GX4M2Z4600C18 8GB
Report a bug
×
Bug description
Source link