RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung M378A5143TB2-CTD 4GB
Compare
Elpida EBJ17RG4EFWA-DJ-F 16GB vs Samsung M378A5143TB2-CTD 4GB
Overall score
Elpida EBJ17RG4EFWA-DJ-F 16GB
Overall score
Samsung M378A5143TB2-CTD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ17RG4EFWA-DJ-F 16GB
Report a bug
Below the latency in the PassMark tests, ns
54
76
Around 29% lower latency
Reasons to consider
Samsung M378A5143TB2-CTD 4GB
Report a bug
Faster reading speed, GB/s
10.3
9.4
Average value in the tests
Faster write speed, GB/s
6.9
6.7
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung M378A5143TB2-CTD 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
76
Read speed, GB/s
9.4
10.3
Write speed, GB/s
6.7
6.9
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1929
1260
Elpida EBJ17RG4EFWA-DJ-F 16GB RAM comparisons
Elpida EBJ17RG4EAFD-DJ-F 16GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Samsung M378A5143TB2-CTD 4GB RAM comparisons
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD AE34G1601U1 4GB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
AMD AE34G2139U2 4GB
Kingston MSI24D4U7D8MH-16 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix MMA82GS6CJR8N-VK 16GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-3200C15-16GTZSK 16GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Kingston 9905702-150.A00G 8GB
Kingston 99U5595-005.A00LF 2GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Samsung M386A8K40CM2-CRC 64GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3200C16-8GFX 8GB
Samsung M471B5273DH0-CH9 4GB
Neo Forza NMUD416E82-3600 16GB
Samsung M391B5673EH1-CH9 2GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Samsung M471B5173DB0-YK0 4GB
Samsung M393A2K40BB1-CRC 16GB
AMD AE34G1601U1 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Protocol Engines Kingrock 800 2GB 2GB
Kingston ACR26D4U9S8MH-8 8GB
Report a bug
×
Bug description
Source link