RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Compare
G Skill Intl F2-8500CL5-2GBPI 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Overall score
G Skill Intl F2-8500CL5-2GBPI 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-8500CL5-2GBPI 2GB
Report a bug
Faster reading speed, GB/s
6
18.2
Average value in the tests
Faster write speed, GB/s
2,935.8
15.1
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
45
Around -96% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
45
23
Read speed, GB/s
6,336.8
18.2
Write speed, GB/s
2,935.8
15.1
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1144
3498
G Skill Intl F2-8500CL5-2GBPI 2GB RAM comparisons
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB RAM comparisons
Kingston KVR16N11/8-SP 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CH9 16GB
Kingston XN205T-MIE 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Apacer Technology 78.BAGNF.40C0B 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston LV32D4U2S8HD-8X 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMK16GX4M4C3200C15 4GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Kingston 99U5474-028.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK128GX4M4A2666C16 32GB
A-DATA Technology DDR3 1333G 2GB
Kingston 9905702-020.A00G 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A5244CB0-CTD 4GB
Team Group Inc. UD5-6400 16GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Kingston ACR16D3LU1MNG/4G 4GB
Kingston ACR16D3LU1MNG/4G 4GB
Report a bug
×
Bug description
Source link