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G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
18.2
测试中的平均数值
更快的写入速度,GB/s
2,935.8
15.1
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
45
左右 -96% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
23
读取速度,GB/s
6,336.8
18.2
写入速度,GB/s
2,935.8
15.1
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1144
3498
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB RAM的比较
Kingston KVR16N11/8-SP 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Samsung M395T2863QZ4-CF76 1GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Essencore Limited KD4AGU880-36A180X 16GB
Samsung M3 78T2863QZS-CF7 1GB
Asgard VML41UG-MIC1U22T1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR16GX4M2C3200C16 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-16GTZN 16GB
Samsung M471B5273CH0-CH9 4GB
Samsung M471A1K43CB1-CTD 8GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-4000C18-8GTRG 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16G3200CL22 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMK32GX4M4A2400C14 8GB
Corsair CMX4GX3M1A1333C9 4GB
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
×
Bug description
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