Samsung 1600 CL10 Series 8GB vs Micron Technology 16G3200CL22 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时
更快的读取速度，GB/s

16.1 14

测试中的平均数值
更快的写入速度，GB/s

10.1 7.3

测试中的平均数值

Micron Technology 16G3200CL22 16GB

需要考虑的原因
Micron Technology 16G3200CL22 16GB

报告一个错误

更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Micron Technology 16G3200CL22 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

16.1 14.0
写入速度，GB/s

10.1 7.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2764 2663

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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SpecTek Incorporated ?????????????????? 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-2800C17-8GVR 8GB

G Skill Intl F4-2800C17-8GVR 8GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

Team Group Inc. TEAMGROUP-SD4-2666 16GB

Team Group Inc. TEAMGROUP-SD4-2666 16GB