RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Compare
G Skill Intl F3-10600CL9-2GBNT 2GB vs Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Overall score
G Skill Intl F3-10600CL9-2GBNT 2GB
Overall score
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-10600CL9-2GBNT 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
44
Around 41% lower latency
Faster reading speed, GB/s
13.2
10.6
Average value in the tests
Reasons to consider
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Report a bug
Faster write speed, GB/s
8.8
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
44
Read speed, GB/s
13.2
10.6
Write speed, GB/s
8.4
8.8
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2070
2374
G Skill Intl F3-10600CL9-2GBNT 2GB RAM comparisons
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905678-138.A00G 8GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology J642GU42J9266N4 16GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905711-017.A00G 4GB
Kingston 9905403-444.A00LF 4GB
Samsung M471A1K43CB1-CRCR 8GB
Corsair CMD8GX3M2A2933C12 4GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
PNY Electronics PNY 2GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Hexon Technology Pte Ltd HEXON 1GB
Transcend Information JM3200HLE-32GK 16GB
TwinMOS 8DPT5MK8-TATP 2GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Essencore Limited KD4AGU880-36A180X 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Report a bug
×
Bug description
Source link