RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-12800CL7-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Compare
G Skill Intl F3-12800CL7-4GBXM 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Overall score
G Skill Intl F3-12800CL7-4GBXM 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-12800CL7-4GBXM 4GB
Report a bug
Faster reading speed, GB/s
14.8
12.5
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
Below the latency in the PassMark tests, ns
31
36
Around -16% lower latency
Faster write speed, GB/s
9.4
8.7
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-12800CL7-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
36
31
Read speed, GB/s
14.8
12.5
Write speed, GB/s
8.7
9.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2481
2361
G Skill Intl F3-12800CL7-4GBXM 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-19200CL9-4GBZMD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-12800CL7-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9965600-005.A00G 16GB
Kingston 9965525-140.A00LF 8GB
Samsung M378A1K43CB2-CTD 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Apacer Technology 78.D2GF2.AU30B 16GB
Samsung M378B5673FH0-CH9 2GB
Samsung M392A4K40BM0-CRC 32GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905624-014.A00G 4GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMD16GX4M4A2800C16 4GB
Kingston KHX2400C12D4/8GX 8GB
Kingston HX424C15FB/8 8GB
Samsung M471B5773DH0-CK0 2GB
Avexir Technologies Corporation T 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMK16GX4M2B4266C19 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Report a bug
×
Bug description
Source link