RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-1333C9-4GIS 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Compare
G Skill Intl F3-1333C9-4GIS 4GB vs SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Overall score
G Skill Intl F3-1333C9-4GIS 4GB
Overall score
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-1333C9-4GIS 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
59
Around 53% lower latency
Reasons to consider
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Report a bug
Faster reading speed, GB/s
17.3
12.4
Average value in the tests
Faster write speed, GB/s
7.6
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-1333C9-4GIS 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
59
Read speed, GB/s
12.4
17.3
Write speed, GB/s
7.5
7.6
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2014
1954
G Skill Intl F3-1333C9-4GIS 4GB RAM comparisons
Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Kingston HX424C15FB/8 8GB
Kingston 99U5429-014.A00LF 4GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMD16GX4M4B3000C15 4GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F3-1333C9-4GIS 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C18-8GTZSW 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3733C17-4GVK 4GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Crucial Technology CT16G4S24AM.M16FB 16GB
Kingston KHX1866C10D3/4G 4GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-2400C15-4GNT 4GB
Report a bug
×
Bug description
Source link