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G Skill Intl F3-2666C12-8GTXD 8GB
Samsung M393A1K43BB0-CRC 8GB

G Skill Intl F3-2666C12-8GTXD 8GB vs Samsung M393A1K43BB0-CRC 8GB

Overall score
star star star star star
G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Overall score
star star star star star
Samsung M393A1K43BB0-CRC 8GB

Samsung M393A1K43BB0-CRC 8GB

Differences Specifications Comments

Differences

G Skill Intl F3-2666C12-8GTXD 8GB Reasons to consider
G Skill Intl F3-2666C12-8GTXD 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 48
    Around 42% lower latency
  • Faster reading speed, GB/s
    18.2 left arrow 11.6
    Average value in the tests
  • Faster write speed, GB/s
    11.5 left arrow 8.4
    Average value in the tests
Samsung M393A1K43BB0-CRC 8GB Reasons to consider
Samsung M393A1K43BB0-CRC 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
G Skill Intl F3-2666C12-8GTXD 8GB
Samsung M393A1K43BB0-CRC 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 48
  • Read speed, GB/s
    18.2 left arrow 11.6
  • Write speed, GB/s
    11.5 left arrow 8.4
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    3067 left arrow 2466

G Skill Intl F3-2666C12-8GTXD 8GB RAM comparisons

G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB

Samsung M393A1K43BB0-CRC 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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