RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F4-4000C14-16GTZR 16GB
Samsung M471A2K43DB1-CWE 16GB
Compare
G Skill Intl F4-4000C14-16GTZR 16GB vs Samsung M471A2K43DB1-CWE 16GB
Overall score
G Skill Intl F4-4000C14-16GTZR 16GB
Overall score
Samsung M471A2K43DB1-CWE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F4-4000C14-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
37
Around 22% lower latency
Faster reading speed, GB/s
24
15.8
Average value in the tests
Faster write speed, GB/s
20.0
13.5
Average value in the tests
Reasons to consider
Samsung M471A2K43DB1-CWE 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F4-4000C14-16GTZR 16GB
Samsung M471A2K43DB1-CWE 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
37
Read speed, GB/s
24.0
15.8
Write speed, GB/s
20.0
13.5
Memory bandwidth, mbps
17000
25600
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
4156
3075
G Skill Intl F4-4000C14-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
Samsung M471A2K43DB1-CWE 16GB RAM comparisons
Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F4-4000C14-16GTZR 16GB
Samsung M471A2K43DB1-CWE 16GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3600C17-16GTZSW 16GB
Samsung M3 78T5663EH3-CF7 2GB
Corsair CMU32GX4M4C3466C16 8GB
Samsung M393B1G70BH0-CK0 8GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMK64GX4M4B2800C14 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Kingston KF552C40-16 16GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
SK Hynix HMT325S6CFR8C-PB 2GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Report a bug
×
Bug description
Source link