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PNY Electronics PNY 2GB
Samsung M378A2K43DB1-CVF 16GB
Compare
PNY Electronics PNY 2GB vs Samsung M378A2K43DB1-CVF 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
Samsung M378A2K43DB1-CVF 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
30
Around 10% lower latency
Reasons to consider
Samsung M378A2K43DB1-CVF 16GB
Report a bug
Faster reading speed, GB/s
16.4
13.8
Average value in the tests
Faster write speed, GB/s
13.1
8.4
Average value in the tests
Higher memory bandwidth, mbps
23400
10600
Around 2.21 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung M378A2K43DB1-CVF 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
30
Read speed, GB/s
13.8
16.4
Write speed, GB/s
8.4
13.1
Memory bandwidth, mbps
10600
23400
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
7-7-7-20 / 1333 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
2274
3310
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Samsung M378A2K43DB1-CVF 16GB RAM comparisons
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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