RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F5-5600J4040C16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Compare
G Skill Intl F5-5600J4040C16G 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Overall score
G Skill Intl F5-5600J4040C16G 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F5-5600J4040C16G 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
27
Around 19% lower latency
Faster reading speed, GB/s
14.9
14.6
Average value in the tests
Faster write speed, GB/s
13.5
10.5
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Report a bug
Specifications
Complete list of technical specifications
G Skill Intl F5-5600J4040C16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Main characteristics
Memory type
DDR5
DDR4
Latency in PassMark, ns
22
27
Read speed, GB/s
14.9
14.6
Write speed, GB/s
13.5
10.5
Memory bandwidth, mbps
19200
17000
Other
Description
PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
no data / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3679
2409
G Skill Intl F5-5600J4040C16G 16GB RAM comparisons
Kingston 99U5701-036.A00G 16GB
Kingston 9905701-132.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4400C16-8GTRS 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M393A4K40BB2-CTD 32GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Apacer Technology 76.D105G.D090B 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMW8GX4M1D3000C16 8GB
Kingston 9965516-112.A00LF 16GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
G Skill Intl F4-3600C19-16GTRS 16GB
Apacer Technology 78.01G86.9H50C 1GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology J641GU42J5213N0 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905712-016.A00G 16GB
Peak Electronics 256X64M-67E 2GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Report a bug
×
Bug description
Source link