Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Overall score
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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Differences

  • Below the latency in the PassMark tests, ns
    60 left arrow 62
    Around -3% lower latency
  • Faster reading speed, GB/s
    7.8 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    2.8 left arrow 1,843.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 60
  • Read speed, GB/s
    3,556.6 left arrow 7.8
  • Write speed, GB/s
    1,843.6 left arrow 2.8
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    542 left arrow 1505
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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